PART |
Description |
Maker |
ISL9R460S3ST ISL9R460S2 ISL9R460P2 ISL9R460S3S |
4A, 600V Stealth Single Diode 4A, 600V Stealth Diode 4A 600V Stealth Diode 4A, 600V Stealth⑩ Diode 4A, 600V StealthDiode
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
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CFRM105-HF |
Halogen Free Fast Recovery Rectifiers, V-RRM=600V, V-R=600V, I-O=1A
|
Comchip Technology
|
IRG4RC10KD IRG4RC10 IRG4RC10KDTRR |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 5A条一(c)|52AA INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A) 600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package
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International Rectifier, Corp. IRF[International Rectifier]
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FFH50US60S |
50A, 600V StealthDiode 50 A, 600 V, SILICON, RECTIFIER DIODE, TO-247 50A, 600V Stealth⑩ Diode 50A, 600V Stealth Diode
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) 600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电 Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A
|
IRF[International Rectifier] International Rectifier, Corp.
|
IRG4PC40K |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
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IRF[International Rectifier]
|
IRG4BC20KS IRG4BC20K-S |
600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.27V, @Vge=15V, Ic=9.0A)
|
IRF[International Rectifier]
|
IRG4BC20W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
|
IRF[International Rectifier]
|
IRG4BC30W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
FQD3N60CTMWS FQU3N60C |
N-Channel QFETMOSFET 600V, 2.4A, 3.4 N-Channel QFET® MOSFET 600V, 2.4A, 3.4Ohms
|
Fairchild Semiconductor
|
HGTP20N60A4 HGTG20N60A4 FN4781 |
600V/ SMPS Series N-Channel IGBTs 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBTs From old datasheet system
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INTERSIL[Intersil Corporation]
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